Description
Advanced concepts including generation-recombination, hot electron effects, and breakdown mechanisms; essential features of small ac characteristics, switching and transient behavior of p-n junctions, and bipolar and MOS transistors; fundamental issues for device modeling; perspective and limitations of Si-devices.
General Information
Additional Website
Name | Office Hours | |
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Haochen Shen | When? Where? | |
Bohao Wu | When? Where? | |
Shaloo Rakheja | When? Where? |