Description

This course covers the working principles of semiconductor devices (pn-junction diode, metal-oxide-semiconductor capacitor, field-effect transistor, bipolar junction transistor) used in modern integrated circuits. One of the student outcomes of this course will be an ability to design a transistor to meet performance requirements within realistic constraints.

General Information


Announcements

Maximum Number of Possible Project Score
12/19/13 2:43 PM

This is a friendly reminder that:

Maximum number of possible project score for EE130 Students is 80.

Maximum number of possible project score for EE230A Students is 100. (80 for the report + 20 for the presentation.)

Final review session today (12/12) at 3:30PM in 241 Cory
12/12/13 11:22 AM

Tsu-Jae will work through the Spring 2013 final exam today, beginning at 3:30PM in 241 Cory.

Homework and Quiz Leftovers
12/11/13 9:16 PM

To those of you who want to pick up your homework and quiz, please come to see me in class tomorrow (preferably before 2:10pm and after 3:30pm, due to the fact that I will be listening and evaluating grad students' presentations 2:10pm-3:30pm).

Also, please make sure you sign your name when you turn in your project report.

Good luck with your finals!

Internship opportunity at Agilent Technologies (Heterojunction Bipolar Transistor Development)
12/11/13 12:57 PM

InP HBT Development Intern

Agilent Technologies, High Frequency Technology Center, Santa Rosa, California
Job Title: InP HBT Thermal/electrical Characterization and Modeling Intern
Requisition #: 2052743 http://www.jobs.agilent.com/?cmpid=4722
Live in beautiful Sonoma County among vineyards, redwood forests, rivers, lakes and coastline while working on state-of-the-art ICs and devices. Agilent Technologies, the world's premier measurement company, has an opening for an InP HBT thermal/electrical characterization and modeling Intern at the High Frequency Technology Center in Santa Rosa, California.
The specific job responsibilities focus on supporting process development of InP HBT IC technology. Major responsibilities will include thermal and electrical measurements and model development of scaled, high speed InP HBTs.

The intern will work closely with material, circuit design, process and device engineers to develop the InP HBT technology. The Intern will perform sophisticated thermal and electrical measurements on scaled HBTs and verify the measurements using physical and compact models. A final report summarizing techniques developed and key results is expected to be prepared by the end of the internship. The results of the work are likely to contribute meaningfully to the manufacture of the key circuits driving Agilent’s multi-billion dollar electronic test and measurement business.
As an Intern, you will join an engineering team that is developing the next generation InP HBT technology for high performance instrument applications. This is an opportunity to apply your coursework and lab experience to a high paced and technically challenging technology development. While contributing your expertise to the technology development effort you will simultaneously gain and apply knowledge about Agilent's industry, infrastructure and products. This is an opportunity to develop real world experience in a company that is a leader in the markets it serves.

Qualifications: BS in Materials Science, Electrical Engineering, Physics or equivalent experience. Experience with advanced semiconductor processes and devices is essential. Experience with analytical and characterization tools and physical device modeling is highly desired. Specific skills in III-V device physics and processing are desirable. Candidates should have excellent interpersonal, problem solving, and communication skills for successful inter-group and intra-group interactions. This engineer must be highly motivated in order to accomplish all the tasks required to meet very aggressive product development schedules and world class manufacturing expectations.
A minimum of 3 months duration is highly desired.
Candidates must be eligible for access to export controlled electronics technology.
Contact: Don D’Avanzo, don_davanzo@agilent.com

Sign-Up Sheet when you submit your project reports
12/09/13 4:01 PM

This is a friendly reminder that "Project reports can be submitted in class (TuTh 200-330PM, 241 Cory) to Peng, through the end of class on 12/12/13."

There will be a sign-up sheet. Please make sure you sign your name when you turn in the project report.

Good luck with your finals.

Quiz #5 on 11/19
11/13/13 8:04 PM

QUIZ#5 will given at the beginning of class on Tuesday, November 19:

  • Material of Lectures 18-21, HW 10-11 (MOS non-idealities, long-channel MOSFET)
  • CLOSED BOOK; only 5 pages of notes allowed
  • No electronic devices
EE130/230A Course Project
11/07/13 6:13 PM

Please note all course project related materials are on the course webpage now: http://inst.eecs.berkeley.edu/~ee130/fa13/project.html

Please study BOTH the Sentaurus Tutorial Slides and Sentaurus Tutorial Video to learn how to use the software. Make sure you are downloading the 2013 Fall Version. The video should be ~16 minutes long.

Have fun.

Nov. 11 (Monday) is university holiday
11/07/13 4:08 PM

Nov. 11 (Monday) is university holiday. Thus, there will be no discussion or office hours on that day. Have a nice long weekend.

Staff Office Hours
NameOffice Hours
Peng Zheng
When?
Where?
Tsu-Jae King Liu
When?
Where?

Homework

Homework
Due Date
Dec 5, 2013
Nov 26, 2013
Nov 21, 2013
Nov 14, 2013
Nov 7, 2013
Oct 31, 2013
Oct 24, 2013
Oct 17, 2013
Oct 10, 2013
Oct 3, 2013
Sep 26, 2013
Sep 5, 2013
Sep 12, 2013
Sep 19, 2013

Lecture Notes

Lecture Notes
Lecture Date
Nov 5, 2013
Dec 5, 2013
Dec 3, 2013
Nov 26, 2013
Nov 21, 2013
Nov 19, 2013
Nov 14, 2013
Nov 12, 2013
Nov 7, 2013
Oct 31, 2013
Oct 29, 2013
Oct 24, 2013
Oct 22, 2013
Oct 17, 2013
Oct 15, 2013
Oct 10, 2013
Oct 8, 2013
Oct 3, 2013
Oct 1, 2013
Sep 26, 2013
Sep 24, 2013
Sep 19, 2013
Sep 17, 2013
Sep 12, 2013
Sep 10, 2013
Sep 5, 2013
Sep 3, 2013
Aug 29, 2013

General Resources